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 NTE631 Silicon Rectifier Diode High-Speed Switch (Surface Mount)
Description: The NTE631 is a high-speed switching diode fabricated in planar technology and encapsulated in a very small rectangular ceramic SMD package. Features: D Small Ceramic SMD Package D High Switching Speed Applications: D High-Speed Switching in Surface Mounted Circuits Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Continuous Forward Current (Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Repetiive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5020mA Non-Repetitive Peak Forward Current (Square Wave, TJ = +25C Prior to Surge), IFSM t = 1s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A t = 1ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A t = 1sec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Total Power Dissipation (TA = +25C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 315K/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200K/W Note 1. Device mounted on an FR4 printed-circuit board. Electrical Characteristics: (TJ = +25C, unless otherwise specified)
Parameter Forward Voltage Symbol VF IF = 1mA IF = 10mA IF = 50mA IF = 150mA Test Conditions Min - - - - Typ - - - - Max 715 855 1.0 1.25 Unit mV mV V V
Electrical Characteristics (Cont'd): (TJ = +25C, unless otherwise specified)
Parameter Reverse Current Symbol IR VR = 25V TJ = +150C VR = 75V TJ = +150C Diode Capacitance Reverse Recovery Time Forward Recovery Voltage Cd trr Vfr f = 1MHz, VR = 0 When switched from IF = 10mA to IR = 10mA, RL = 100, measured at IR = 1mA When switched from IF = 10mA, tr = 20ns Test Conditions Min - - - - - - - Typ - - - - - - - Max 30 30 1 50 1.5 4 1.75 Unit nA A A A pF ns V
.078 (2.0)
.049 (1.25)
Cathode Identifier
K
IIIIIIIIII IIIIIIIIII IIIIIIIIII IIIIIIIIII IIIIIIIIII IIIIIIIIII IIIIIIIIII IIIIIIIIII IIIIIIIIII IIIIIIIIII IIIIIIIIII IIIIIIIIII IIIIIIIIII
A
.062 (1.6) Max


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